4200-SCS Parameter Analyzer
The comprehensive solution for electrical characterization of materials and devices
The 4200-SCS is a modular, fully integrated parameter analyzer that performs electrical characterization of materials, semiconductor devices and processes. From basic I-V and C-V measurement sweeps to advanced ultra-fast pulsed I-V, waveform capture, and transient I-V measurements, the 4200-SCS provides the researcher or engineer with critical parameters needed for design, development or production.
DC I-V measurements are the cornerstone of device and material testing. The 4200-SCS Source Measure Units (SMU) are precision instruments which are used for sourcing current or voltage and simultaneously measuring capturing current measurements and voltage measurements with high accuracy. The 4200-SCS provides a wide range of I-V measurements including: sub-pA leakage measurements, µΩ resistance measurements.
Capacitance-Voltage (C-V) testing is widely used to determine a variety of semiconductor parameters such as doping concentration and profiles, carrier lifetime, oxide thickness, interface trap density and more. The 4200-SCS provides three C-V methods: Multi-frequency (1 kHz - 10 MHz) C-V, Very Low Frequency (10 mHz - 10 Hz) C-V, and Quasi-static C-V measurements.
Pulsed I-V testing is ideal for preventing device self-heating or minimizing charge trapping effects when characterizing devices. By using narrow pulses and/or low duty cycle pulses rather than DC signals, important parameters are extracted while maintaining the DUT performance. Transient I-V measurements allow scientists and engineers to capture ultra high speed current or voltage waveforms in the time domain in order to study dynamic properties.
Maintaining the quality and reliability of gate oxides of MOS structures is a critical task in a semiconductor fab. Capacitance-Voltage (C-V) measurements are commonly used in studying gate-oxide quality in detail. The 4200-SCS equipped with a C-V instrument module can simplify testing and analysis of MOS capacitor measurements. Common measurement parameters such as oxide thickness, flatband voltage, and threshold voltage etc. are included with the 4200-SCS.
Stress-measure testing is commonly used to evaluate operating lifetimes and wear-out failure mechanisms of semiconductor devices. Common WLR tests include Hot Carrier Injection (HCI) or Channel Hot Carrier (CHC), Negative Bias Temperature Instability (NBTI) and Time Dependent Dielectric Breakdown (TDDB). Such data are used to evaluate device designs and monitor manufacturing processes.
With the Ultra-Fast I-V module's multi-pulse waveform generation and measurement capability, the 4200-SCS is specifically designed to meet the challenges posed by cutting-edge non-volatile memory devices. The powerful features shown below allow you to meet nearly any NVM cell testing need.
Nanotechnology research works with matter at the molecular level, atom by atom, to create structures with fundamentally new properties. Research today includes devices that utilize carbon nano tubes, semiconductor nanowires, molecular organic-based electronics, and single-electron devices. These devices can't be tested using standard test techniques due to the physical size of the devices. The 4200-SCS Parameter Analyzer provides an extensive library of application tests to enable you to test quickly and with confidence.